PART |
Description |
Maker |
M68731HM 68731HM |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 145-174MHz, 6.5W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER 145-174MHz 6.5W FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER / 145-174MHz / 6.5W / FM PORTABLE RADIO 145 MHz - 174 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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PF0340A |
MOS FET Power Amplifier Module
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HITACHI[Hitachi Semiconductor]
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M68741 68741 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO 硅场效应晶体管功率放大器89 - 915MHz.8W,便携式收音机调
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M68745H 68745H |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER 896-941MHz 3.8W FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER / 896-941MHz / 3.8W / FM PORTABLE RADIO
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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M68731N 68731N |
From old datasheet system SILICON MOS FET POWER AMPLIFIER / 142-163MHz / 7W / FM PORTABLE RADIO RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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PF0414 PF0414A |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone
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HITACHI[Hitachi Semiconductor]
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M67799SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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M68732SL 68732SL |
From old datasheet system RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 330-380MHz, 7W, FM PORTABLE RADIO
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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M68732UH 68732UH |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-490MHz, 7W, FM PORTABLE RADIO From old datasheet system
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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PF08103A |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
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HITACHI[Hitachi Semiconductor]
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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MP6801 |
Power MOS FET Module Silicon N / P Channel MOS Type TOSHIBA POWER MOS FET MODULE SILICON & P CHANNEL MOS TYPE
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TOSHIBA[Toshiba Semiconductor]
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